Semiconductor light-emitting device having a current adjusting l

Details Semiconductor light-emitting device having a current adjusting l Semiconductor light-emitting device having a current adjusting l

1996-02-14

1998-09-29

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 98, 257 99, 257102, 372 46, H01L 3300

Patent

active

058148396

ABSTRACT:
A current path adjusting layer composed of a current blocking region and a current passing region is provided on a layered structure including an active layer. An n-type electrode is provided above the current path adjusting layer so as to oppose the current blocking region. A p-type GaAs substrate has a groove-formed region where a plurality of grooves are formed, and the conductivities of the current path adjusting layer containing Zn and Se as dopants, grown on the substrate, depend upon an orientation of each slope of the grooves and that of a flat region of the substrate surface.

REFERENCES:
patent: 5115443 (1992-05-01), Miyazawa
patent: 5528615 (1996-06-01), Shima

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