Semiconductor light-emitting device for optical communications

Details Semiconductor light-emitting device for optical communications Semiconductor light-emitting device for optical communications

2005-08-09

2005-08-09

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S089000, C257S090000, C257S096000

Reexamination Certificate

active

06927426

ABSTRACT:
A semiconductor light-emitting device of this invention includes at least a first cladding layer formed on a substrate, a light-emitting structure including an active layer made of In1−X−YGaXAlYN (0≦X, Y≦1, 0≦X+Y<1) and formed on the first cladding layer, and a second cladding layer formed on the light-emitting structure. The active layer is made of a material with a small Auger effect and a small dependency of its band gap energy on environment temperature.

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