Semiconductor light emitting device, electrode of the same devic

Details Semiconductor light emitting device, electrode of the same devic Semiconductor light emitting device, electrode of the same devic

1996-11-08

1998-06-02

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257 81, H01L 3300

Patent

active

057604231

ABSTRACT:
A semiconductor light emitting device has a structure of stacked semiconductor layers including a double hetero junction, and a electrode having a plurality of stacked metal layers exhibiting a light transmitting property and an oxygen rich layer exhibiting the light transmitting property and interposed between said metal layers. The oxygen rich layer is preferably oxide layer. Such structure exhibits high light emission.

REFERENCES:
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5373175 (1994-12-01), Ozawa et al.
patent: 5506451 (1996-04-01), Hyugaji
patent: 5523591 (1996-06-01), Fleming et al.
patent: 5661313 (1997-08-01), Dubbelday et al.

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