Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-11-28
2006-11-28
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S079000, C257S098000, C257S099000, C257SE33072
Reexamination Certificate
active
07141825
ABSTRACT:
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.
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T. Takemoto et al “High Reliability Micro Soldering Techniques” Kogyou Chousaki Publishing Co. Ltd., Tokyo, Japan; pp. 360-375, Jan. 21, 1991.
Horio Naochika
Tamura Hitoshi
Tsuchiya Masahiko
Frishauf, Holtz, Goodman & Chick, PC
Jackson Jerome
Nguyen Joseph
Stanley Electric Co. Ltd.
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