Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-07-17
2011-10-18
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE33009, C257SE33010, C257S013000, C257S014000, C257SE33008
Reexamination Certificate
active
08039830
ABSTRACT:
A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
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Kwon et al.; “Si Delta Doping in A GaN Barrier Layer of InGaN/GaN Multiquantum Well for an Efficient Ultraviolet Light-Emitting Diode”, Journal of Applied Physics, vol. 97, pp. 106109-1 through 106109-3, (2005).
Ohba et al., U.S. Appl. No. 12/507,539, filed Jul. 22, 2009, entitled Method for Manufacturing Semiconductor Light Emitting Device.
Kaneko Kei
Katsuno Hiroshi
Kushibe Mitsuhiro
Ohba Yasuo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Richards N Drew
Sun Yu-Hsi D
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