Semiconductor light emitting device and semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S099000, C257SE33063, C257SE33065

Reexamination Certificate

active

07615794

ABSTRACT:
A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.

REFERENCES:
patent: 2003/0006409 (2003-01-01), Ohba
patent: 2004/0155250 (2004-08-01), Ohba
patent: 2007/0034883 (2007-02-01), Ohba
patent: 2009/0078951 (2009-03-01), Miki et al.
patent: 2009/0101923 (2009-04-01), Choi et al.
patent: 2009/0114940 (2009-05-01), Yang et al.
patent: 2003-168823 (2003-06-01), None
patent: 2006-41498 (2006-02-01), None
patent: 2006-245230 (2006-09-01), None
patent: 2006-245231 (2006-09-01), None
patent: 2006-245232 (2006-09-01), None
Katsuno, H. et al., “Semiconductor Light Emitting Device and Method for Manufacturing Same,” U.S. Appl. No. 12/195,580, filed Aug. 21, 2008.

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