Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-03-13
2008-12-09
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S091000, C257S095000, C257S744000, C257S745000, C257SE33063, C257SE33065, C257SE33068
Reexamination Certificate
active
07462869
ABSTRACT:
A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device includes: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and extends from a first side face to a second side face opposing the first side face of the transparent substrate.
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Akaike Yasuhiko
Ohashi Kenichi
Sugawara Yasuharu
Sugiyama Hitoshi
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sefer Ahmed
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