Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-11-06
2007-11-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33058, C257SE33056, C257SE33001
Reexamination Certificate
active
11149461
ABSTRACT:
A semiconductor light emitting device comprises: embedding resin; a first lead having a first inner lead section embedded in the embedding resin and a first outer lead section protruding from one side face of the embedding resin; a second lead having a second inner lead section embedded in the embedding resin and a second outer lead section protruding from a side face opposed to the one side face of the embedding resin; a semiconductor light emitting chip mounted on a portion of the first inner lead section exposed in a recess provided on an upper face of the embedding resin; and a wire connecting the semiconductor light emitting chip with the second lead. The first and second inner lead sections and the first and second outer lead sections each have a substantially coplanar rear face. At least a part of the rear face of the first inner lead section and at least a part of the rear face of the second inner lead section are not covered with the embedding resin but are exposed.
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CN Office Action dated Mar. 9, 2007, CN Patent Appln. No. 2005100778983.
Matsumoto Iwao
Miyakawa Takeshi
Oshio Hiroaki
Takezawa Hatsuo
Banner & Witcoff , Ltd.
Jackson Jerome
Kabushiki Kaisha Toshiba
Karimy Mohammad T.
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