Semiconductor light-emitting device and production method thereo

Details Semiconductor light-emitting device and production method thereo Semiconductor light-emitting device and production method thereo

1997-11-26

1999-04-20

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 46, 438 26, H01S 302

Patent

active

058952250

ABSTRACT:
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

REFERENCES:
patent: 5403773 (1995-04-01), Nitta et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5583879 (1996-12-01), Yamazaki et al.
patent: 5776794 (1998-07-01), McCann
Shuji Nakamura et al., P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light Emitting Diodes, Jpn. J. Appl. Phys, vol. 32 (1993) pp. L8-L11, Part 2, No. 1A/B, Jan. 15, 1993.
English translation of International Preliminary Examination Report dated Jul. 25, 1996.

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