Semiconductor light-emitting device and production method thereo

Details Semiconductor light-emitting device and production method thereo Semiconductor light-emitting device and production method thereo

1999-02-03

2000-10-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

438 46, 438 47, 438507, 257 13, 372 44, H01L 2120

Patent

active

061366269

ABSTRACT:
A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

REFERENCES:
patent: 4862471 (1989-08-01), Pankove
patent: 5403773 (1995-04-01), Nitta et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5583879 (1996-12-01), Yamazaki et al.
patent: 5776794 (1998-07-01), McCann
patent: 5895225 (1999-04-01), Kidoguchi et al.
Shuji Nakamura et al. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light Emitting Diodes, Jpn. J. Appl. Phys, vol. 32 (1993) pp. L8-L11, Part 2, No. 1A/B, Jan. 15, 1993.
English translation of International Preliminary Examination Report dated Jul. 25, 1996.
International Search Report mailed Nov. 21, 1995.
European Search Report dated Nov. 10, 1998.
English translation of Office Action dated Jan. 12, 1999 from corresponding Japanese Patent Application No. 8-505644 (4 pages).

Affiliated with

Also associated with

Rating

Semiconductor light-emitting device and production method thereo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting device and production method thereo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device and production method thereo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1962638