Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S088000, C257S094000, C257S099000, C257S103000
Reexamination Certificate
active
06995399
ABSTRACT:
AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1of the AlGaInP system laser device (24) is parallel to optical axis L2of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.
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Abe Hiroaki
Agatsuma Shinichi
Hoshi Nozomu
Suzuki Youichi
Depke Robert J.
Louie Wai-Sing
Pham Long
Sony Corporation
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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