Semiconductor light emitting device and methods of manufacturing

Details Semiconductor light emitting device and methods of manufacturing Semiconductor light emitting device and methods of manufacturing

1995-03-10

1997-01-28

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437129, 437126, H01L 21208

Patent

active

055977618

ABSTRACT:
An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0<x.ltoreq.1, 0<y.ltoreq.1) is formed on a compound semiconductor single crystal substrate composed of an element(s) from Group III and an element(s) from Group V in the periodic table by means of the metalorganic vapor phase epitaxy method (MOVPE method), while controlling the amount of the organic aluminum compound introduced. The organic aluminum compound is, for example, trimethyl aluminum (TMAl). The nitrogen-doped epitaxial layer is, for example, an active layer composed of said compound semiconductor alloy which has a band gap of 2.30 eV or larger and also has an alloy composition of an indirect transition area or similar to it.

REFERENCES:
patent: 4494237 (1985-01-01), Di Forte Poisson et al.
patent: 5401684 (1995-03-01), Yamada et al.
Matloubian et al in "Jr. Electronic Materials vol. 14(5) 1985, pp. 633-644", MOCVD epitaxial growth . . . .
Kobayashi et al in "Electronics Letters Oct. 1984, pp. 887-888", Improved 2 Deg Mobility . . . .

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