Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1998-02-09
2000-05-09
Fahmy, Wael
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438681, 148DIG95, 372 45, 372 46, 372 50, H01L 2100
Patent
active
060603356
ABSTRACT:
According to the present invention, a high-efficiency and high reliability GaN-based semiconductor light emitting device having uniform light emission from the active layer, can be obtained by suppressing the defect density of the interface between the guide layer and cladding layer. When manufacturing the GaN-based semiconductor light emitting device, the growth temperature and pressure are increased, or the carrier gas flow rate and ammonia flow rate necessary for efficiently growing p-GaAlN are increased, in the vicinity of the interface between the upper p-GaN guide layer and p-AlGaN cladding layer in particular, and thus a method and structure, capable of suppressing these high defect densities generated, can be provided. By selecting appropriate conditions, namely whether the increment in the temperature and pressure, and the increment in the flow rates of the carrier gas and ammonia should be carried out during the growth of the cladding layer or after, or they should be carried out at the same time or independently, or by inserting an InAlGaN or InGaN buffering layer for preventing the generation of defects, between the waveguide layer and cladding layer, the defect densities can be very much decreased.
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Shuji Nakamura, et al., "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes," Japanese Journal of Applied Physics, vol. 35, Part 2, No. 1B, (Jan. 15, 1996), pp. L74-L76.
Hatakoshi Gen-ichi
Onomura Masaaki
Rennie John
Fahmy Wael
Kabushiki Kaisha Toshiba
Pham Long
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