Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1997-11-05
1999-12-07
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 46, H01L 2120
Patent
active
059982314
ABSTRACT:
An AlGaInP-based semiconductor light-emitting device is of a real-guide type and has excellent crystallinity and excellent laser characteristics. In an AlGaInP-based semiconductor light-emitting device having at least a first conductivity-type first cladding layer (3), an active layer (4) and a second conductivity-type second cladding layer (5), a stripe-shaped ridge (8) is formed on the second cladding layer (5) and first conductivity-type AlGaAs current confinement layers (19) with a band gap larger than that of the active layer (4) and whose refractive index is smaller than that of the active layer are formed so as to bury grooves (7) formed at both sides of the stripe-shaped ridge (8).
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Mulpuri Savitri
Sony Corporation
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