Coherent light generators – Particular component circuitry – Optical pumping
Patent
1987-09-11
1989-09-26
Sikes, William L.
Coherent light generators
Particular component circuitry
Optical pumping
372 46, 372 48, 148DIG50, 148DIG51, 148DIG66, 148DIG95, 295691, 156649, H01L 3300, H01L 21306, H01L 2100, C03B 1310
Patent
active
048704687
ABSTRACT:
An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type Inp cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
REFERENCES:
patent: 3865646 (1975-02-01), Logan et al.
patent: 4249967 (1981-02-01), Liu et al.
patent: 4468850 (1984-10-01), Liau et al.
"Low Temperature and Rapid Mass Transport Technique for GaInAsP/p-InP DFB Lasers", Inst. Phys. Conf., Ser. No. 79, Chapt. 3; Y. Hirayama et al; Paper presented at Int. Sym. GaAs and Related Compounds, Karuizawa, Japan, 1985.
"26-5 GHz Bandwidth InGaAsP Lasers With Tight Optical Confinement", Electronics Letters, vol. 21, No. 23, pp. 1090-1091; J. E. Bowers et al; 7th Nov. 1985.
Journal of Lightwave Technology, vol. LT-2, No. 4, Aug. 1984, pp. 496-503, New York, US; M. Sugimoto et al.: "InGaAsP/InP Current Confinement Mesa Substrate Buried Heterostructure Laser Diode Fabricated by One-Step Liquid-Phase Epitaxy", FIG. 1.
IEEE Journal of Quantum Electronics, vol. QE-20, No. 8, Aug. 1984, pp. 855-865, New York, US; Z. Liau et al.: "Fabrication Characterization and Analysis of Mass-Transported GaInAsP/InP Bured Heterostructure Lasers", *FIGS. 1, 2; pp. 855-856, WO-A-8 600 172 (American Telephone & Telegraph Co.), *FIG. 3, p. 10, line 26-p. 4, line 16*.
Applied Physics Letters, vol. 44, No. 10, May 15, 1984, pp. 975-977, New York, US; K. Imanaka et al.: "A Novel Technique to Fabricate GaInsP/InP Buried Heterostructure Laser Diodes", *FIGS. 1, 3; p. 976, right-hand column-p. 977*.
Furuyama Hideto
Hirayama Yuzo
Kinoshita Jun'ichi
Morinaga Motoyasu
Epps Georgia Y.
Kabushiki Kaisha Toshiba
Sikes William L.
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