Semiconductor light emitting device and method of fabricating th

Details Semiconductor light emitting device and method of fabricating th Semiconductor light emitting device and method of fabricating th

1990-09-27

1992-04-07

Prenty, Mark

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 61, 372 45, H01L 3300, H01L 29161, H01L 2924, H01S 319

Patent

active

051032716

ABSTRACT:
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
Applied Physics Letter, vol. 43, (1983) p. 1034-H. Ishiguro et al, "High Efficient GaAIAs light-emitting diodes of 660 nm with a double heterostructure on a GaAIAs substrate".
Electronics Letter, vol. 23, No. 3, (1987) p. 134-K. Iga et al, "Microcavity GaAIAs/GaAs surface-emitting laser with I.sub.th =6mA".

Affiliated with

Also associated with

Rating

Semiconductor light emitting device and method of fabricating th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device and method of fabricating th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device and method of fabricating th will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1898978