Semiconductor light emitting device and method of fabricating th

Details Semiconductor light emitting device and method of fabricating th Semiconductor light emitting device and method of fabricating th

1998-02-20

1999-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 96, 257 97, 257622, 257627, 257628, 372 45, 372 46, 372 48, 438 44, H01L 3300

Patent

active

059397349

ABSTRACT:
A method of fabricating a semiconductor light emitting device includes fabricating, semiconductor light emitting devices on a large scale by forming desirable end surfaces of resonators using an etching process. The method includes the steps of forming, on a base body, semiconductor layers for constituting a plurality of semiconductor light emitting devices; grooving the semiconductor layers formed on the base body in the direction from a front surface of the semiconductor layers to the base body, to form stripe-like grooves; and forming a semiconductor film in the grooves by epitaxial growth; wherein a side surface of each of the grooves, which side surface finally forms an end surface of a resonator of each of the semiconductor light emitting devices, is a crystal plane being later in epitaxial growth rate than a bottom surface of the groove.

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patent: 5291033 (1994-03-01), Morishima
patent: 5514619 (1996-05-01), Wakabayashi et al.

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