Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-06-21
2011-06-21
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S103000, C257S102000, C257SE33019, C257SE33013, C257SE21461, C438S045000, C438S104000
Reexamination Certificate
active
07964868
ABSTRACT:
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
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Decision to Grant a Patent dated Jul. 19, 2010, issued in corresponding Korean Patent Application No. 10-2008-7006091.
Kashiwaba Yasube
Nakagawa Akira
Niikura Ikuo
Citizen Tohoku Co., Ltd.
Ho Tu-Tu V
Incorporated National University Iwate University
Westerman Hattori Daniels & Adrian LLP
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