Semiconductor light-emitting device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S103000, C257S102000, C257SE33019, C257SE33013, C257SE21461, C438S045000, C438S104000

Reexamination Certificate

active

07964868

ABSTRACT:
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

REFERENCES:
patent: 2002/0084455 (2002-07-01), Cheung
patent: 2003/0146433 (2003-08-01), Cantwell et al.
patent: 2005/0020035 (2005-01-01), Nause et al.
patent: 2005/0199885 (2005-09-01), Hata et al.
patent: 2002-326895 (2002-11-01), None
patent: 2003-282434 (2003-10-01), None
patent: 2004-221132 (2004-08-01), None
patent: 2004-221352 (2004-08-01), None
patent: 2004-247411 (2004-09-01), None
patent: 2004-296821 (2004-10-01), None
patent: 2004-247681 (2007-09-01), None
Translation of International Preliminary Report on Patentability mailed Mar. 20, 2008 of International Application No. PCT/JP2006/317569.
International Search Report of PCT/JP2006/317569, date of mailing Dec. 12, 2006.
Decision to Grant a Patent dated Jul. 19, 2010, issued in corresponding Korean Patent Application No. 10-2008-7006091.

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