Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2011-05-03
2011-05-03
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S022000, C438S044000, C438S689000, C257SE21228, C257SE21219
Reexamination Certificate
active
07935554
ABSTRACT:
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
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Kim Hyun-Soo
Kim Joo-sung
Lee Jeong-wook
Paek Ho-sun
Sung Youn-joon
Buchanan & Ingersoll & Rooney PC
Liu Benjamin Tzu-Hung
Ngo Ngan
Samsung LED Co., Ltd.
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