Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2011-06-28
2011-06-28
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S102000, C257SE33025, C257SE33062, C257SE21155, C438S046000
Reexamination Certificate
active
07968893
ABSTRACT:
Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
REFERENCES:
patent: 6281526 (2001-08-01), Nitta et al.
patent: 2006/0157718 (2006-07-01), Seo et al.
patent: 2006/0214182 (2006-09-01), Udagawa
patent: 2008/0185608 (2008-08-01), Chitnis
patent: 3482955 (2004-01-01), None
patent: 10-0736674 (2007-07-01), None
Choi Kwang Ki
Choi Pun Jae
Kim Hyun Soo
Kim Yu Seung
Lee Jin Hyun
Malsawma Lex
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
LandOfFree
Semiconductor light emitting device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2628057