Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-05-17
2010-02-09
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257SE33037
Reexamination Certificate
active
07659557
ABSTRACT:
The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
REFERENCES:
patent: 6377598 (2002-04-01), Watanabe et al.
patent: 7087924 (2006-08-01), Wu et al.
patent: 2004/0079947 (2004-04-01), Lan et al.
Li Yu-Chu
Tsai Chiung-Chi
Tsai Tzong-Liang
Birch & Stewart Kolasch & Birch, LLP
Huga Optotech Inc.
Monbleau Davienne
Rodela Eduardo A
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