Semiconductor light emitting device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S088000, C257SE21001, C257SE33001, C438S035000

Reexamination Certificate

active

07851813

ABSTRACT:
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

REFERENCES:
patent: 10242512 (1998-09-01), None

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