Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-08-27
2010-12-14
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S088000, C257SE21001, C257SE33001, C438S035000
Reexamination Certificate
active
07851813
ABSTRACT:
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
REFERENCES:
patent: 10242512 (1998-09-01), None
Kim Tae Yun
Son Hyo Kun
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Payen Marvin
Smith Bradley K
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