Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2007-11-13
2007-11-13
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S044000, C977S938000, C257SE31058, C257SE25032
Reexamination Certificate
active
11154559
ABSTRACT:
Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and nano-needles grown on the GaN group multi-layer. The nano-needles improve the extraction efficiency of photons.
REFERENCES:
patent: 2006/0223211 (2006-10-01), Mishra et al.
patent: 2007/0034888 (2007-02-01), Bader et al.
Lee Jong Soo
Lee Min Sang
Lee Young Ki
Luxpia Co., Ltd.
Rothwell Figg Ernst & Manbeck
Trinh (Vikki) Hoa B.
Weiss Howard
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