Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-01-25
2005-01-25
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S438000, C438S459000, C438S603000
Reexamination Certificate
active
06846686
ABSTRACT:
A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.
REFERENCES:
patent: 5297158 (1994-03-01), Naitou et al.
patent: 5306950 (1994-04-01), Fujikawa et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5488235 (1996-01-01), Nozaki et al.
patent: 5783477 (1998-07-01), Kish et al.
patent: 5920766 (1999-07-01), Floyd
patent: 6107648 (2000-08-01), Shakuda et al.
patent: 6121127 (2000-09-01), Shibata et al.
patent: 6258699 (2001-07-01), Chang et al.
patent: 6343163 (2002-01-01), Kawanishi
patent: 6384430 (2002-05-01), Nakatsu et al.
patent: 6395572 (2002-05-01), Tsutsui et al.
patent: 6433364 (2002-08-01), Hosoba et al.
patent: 6465809 (2002-10-01), Furukawa et al.
patent: 6528823 (2003-03-01), Akaike et al.
patent: 20010016366 (2001-08-01), Sasaki et al.
patent: 20010042866 (2001-11-01), Coman et al.
patent: 08-213657 (1996-08-01), None
Shoou-Jinn Chang et al., “AlGaInP / GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology”, Jpn. J Appl. Phys. vol. 35 (1996) pp. 4199-4202.
F.A. Kish et al., “Very High-Efficiency Semiconductor Wafer-Bonded Transparent-Substrate (AlxGa1-x)0.5In0.5P/GaP Light Emitting Diodes”, Appl. Phys. Lett. vol. 64 No. 21 (1994) pp. 2839-2841.
Jitosho Tamotsu
Saeki Ryo
Sugawara Hideto
Watanabe Yukio
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Mulpuri Savitri
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