Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-01-25
2011-01-25
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S098000, C257S103000, C257SE33005, C257SE33008, C257SE33023, C438S047000
Reexamination Certificate
active
07875874
ABSTRACT:
A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
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Shim Sang Kyun
Yoon Ho Sang
Birch & Stewart Kolasch & Birch, LLP
Huynh Andy
LG Innotek Co. Ltd.
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