Semiconductor light emitting device and method for producing...

Details Semiconductor light emitting device and method for producing... Semiconductor light emitting device and method for producing...

2006-07-04

2006-07-04

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

07071015

ABSTRACT:
A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.

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Abstract of Japan, vol. 16, No. 188, May 7, 1992 & JPA 02-129915, May 18, 1999.

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