Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2010-12-30
2011-10-25
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S094000, C257SE33001, C438S022000
Reexamination Certificate
active
08044385
ABSTRACT:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
REFERENCES:
patent: 2002/0054616 (2002-05-01), Kamiyama et al.
patent: 2003/0118066 (2003-06-01), Bour et al.
patent: 2004/0256611 (2004-12-01), Kim et al.
patent: 2006/0118820 (2006-06-01), Gaska et al.
patent: 2007/0045607 (2007-03-01), Chen et al.
patent: 2010/0127236 (2010-05-01), Bour et al.
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Smith Bradley K
Valentine Jami M
LandOfFree
Semiconductor light emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4256443