Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-02-16
2010-10-12
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C257S098000, C257SE33062, C257SE33002, C438S043000
Reexamination Certificate
active
07811839
ABSTRACT:
The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 μm and a bottom base diameter of from 0.05 to 2.0 μm; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 μm and a base diameter of from 0.05 to 2.0 μm. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μm and a surface density of 2×106to 2×1010cm−2, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.
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Examination Report issued on Feb. 25, 2010 in British Application No. 0718102.7.
Kasahara Kenji
Ueda Kazumasa
Dickey Thomas L
Fitch Even Tabin & Flannery
Sumitomo Chemical Company, Ltd,
Yushin Nikolay
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