Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-07-25
2008-10-21
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S081000, C257S099000, C257SE33074, C257SE33067
Reexamination Certificate
active
07439552
ABSTRACT:
A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
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patent: 2005/0194605 (2005-09-01), Shelton et al.
patent: 59-050401 (1984-03-01), None
patent: 08-110401 (1996-04-01), None
patent: 2005-005679 (2005-01-01), None
Koike Susumu
Takigawa Shinichi
Ueda Daisuke
Ho Tu-Tu V
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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