Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2008-07-08
2008-07-08
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C257S097000, C257SE33011, C438S032000, C438S042000
Reexamination Certificate
active
10537868
ABSTRACT:
A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
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Hasegawa Yoshiaki
Yamada Atsushi
Yokogawa Toshiya
Ingham John C
Renner , Otto, Boisselle & Sklar, LLP
Weiss Howard
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