Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2007-01-23
2007-01-23
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S013000, C257S085000, C257S094000, C257S198000, C257SE33001, C438S022000, C438S024000
Reexamination Certificate
active
10957614
ABSTRACT:
There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer8made of (AlyGa1−y)zIn1−zP (0≦y≦1, 0<z<1) disposed between an emitter layer3and a transparent substrate2which is transparent to emission wavelengths from the emitter layer3.
REFERENCES:
patent: 5502316 (1996-03-01), Kish et al.
patent: 2004/0104395 (2004-06-01), Hagimoto et al.
patent: A-6-302857 (1994-10-01), None
patent: A-2001-144322 (2001-05-01), None
patent: PUB 3230638 (2001-09-01), None
patent: PUB 3239061 (2001-10-01), None
patent: PUB 3507716 (2003-12-01), None
Kish et al., “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5ln0.5P/GaP light-emitting diodes”, May 23, 1994, American Institute of Physics, Applied Physics Letters 64(21) p. 2839-2841.
Kurahashi Takahisa
Murakami Tetsurou
Nakatsu Hiroshi
Ohyama Shouichi
Flynn Nathan J.
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Wilson Scott R.
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