Semiconductor light-emitting device and method for...

Details Semiconductor light-emitting device and method for... Semiconductor light-emitting device and method for...

2007-01-30

2007-01-30

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S189000, C257S191000, C257SE33025

Reexamination Certificate

active

10817800

ABSTRACT:
An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III–V nitride semiconductor with oxygen atoms.

REFERENCES:
patent: 6261859 (2001-07-01), Ouchi
patent: 6306672 (2001-10-01), Kim
patent: 6534800 (2003-03-01), Ohbo et al.
patent: 6593193 (2003-07-01), Nishii et al.
patent: 2003/0053505 (2003-03-01), Bour et al.
patent: 1 137 072 (2001-09-01), None
patent: 09-266355 (1997-10-01), None
patent: 11-008439 (1999-01-01), None
patent: 2001-044567 (2001-02-01), None
patent: 2001-160658 (2001-06-01), None
patent: 2001-267555 (2001-09-01), None
patent: 2002-329863 (2002-11-01), None
Hiroyuki Masato, et al., “Novel High Drain Brekdown Voltage AlGaN/GaN HFETs using Selective Thermal Oxidation Process”, International Electron Devices Meeting, pp. 377-380, (Dec. 10, 2000).
Kaoru Inoue, et al., “Novel GaN-based MOS HFETs with Thermally Oxidized Gate Insulator”, International Electron Meeting, pp. 577-580, (Dec. 2, 2001).

Affiliated with

Also associated with

Rating

Semiconductor light-emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3721499