Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-02-01
2005-02-01
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S042000, C438S043000, C438S044000, C438S045000, C438S046000, C438S047000
Reexamination Certificate
active
06849473
ABSTRACT:
In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.
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Nakamura Jun-ichi
Ohyama Shouichi
Sasaki Kazuaki
Louie Wai-Sing
Nixon & Vanderhye P.C.
Pham Long
Sharp Kabushiki Kaisha
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