Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-02-08
2011-02-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S094000, C257SE33001, C438S022000
Reexamination Certificate
active
07884350
ABSTRACT:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
REFERENCES:
patent: 2002/0054616 (2002-05-01), Kamiyama et al.
patent: 2003/0118066 (2003-06-01), Bour et al.
patent: 2004/0256611 (2004-12-01), Kim et al.
patent: 2007/0045607 (2007-03-01), Chen et al.
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Smith Bradley K
Valentine Jami M
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