Semiconductor light emitting device and method

Details Semiconductor light emitting device and method Semiconductor light emitting device and method

2006-03-21

2006-03-21

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S026000, C438S029000, C438S033000

Reexamination Certificate

active

07015054

ABSTRACT:
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient α, at the emission wavelength of the active region, of α>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, α, of the substrate material is α<1 cm−1.

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