Semiconductor light emitting device and manufacturing method the

Details Semiconductor light emitting device and manufacturing method the Semiconductor light emitting device and manufacturing method the

1995-09-14

1998-05-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 257 96, H01S 319, H01L 3300

Patent

active

057517525

ABSTRACT:
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

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Nakamura et al., "Candela-Class High-Brightness InGaN/AIGaN Double-Heterostructure Blue-Light-Emitting Diodes", Applied Physics Letters, vol. 64, No. 13, pp. 1687-1689, Mar. 1994.

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