Semiconductor light-emitting device and manufacturing method...

Details Semiconductor light-emitting device and manufacturing method... Semiconductor light-emitting device and manufacturing method...

2006-12-29

2009-11-10

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S101000, C257SE33008, C438S037000

Reexamination Certificate

active

07615773

ABSTRACT:
A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.

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patent: 2002/0190261 (2002-12-01), Sarathy et al.
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