Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-06-30
2008-12-16
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S627000, C257S618000, C257SE33027
Reexamination Certificate
active
07465962
ABSTRACT:
A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer30including an AlGaInP active layer and a second wafer23which transmits light derived from the active layer. The crystal axes of the epitaxial layer30and the second wafer23are generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {100} of the second wafer23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.
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Inoguchi Yukari
Kametani Eiji
Murakami Tetsuroh
Watanabe Nobuyuki
Ahmed Selim
Nixon & Vanderhye PC
Sharp Kabushiki Kaisha
Tran Minh-Loan
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