Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2008-08-08
2011-11-15
Tran, Long (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000, C257S094000, C257SE33001, C257SE33034
Reexamination Certificate
active
08058666
ABSTRACT:
A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.
REFERENCES:
patent: 6255129 (2001-07-01), Lin
patent: 2006/0091417 (2006-05-01), Sugimoto et al.
patent: 2007/0122994 (2007-05-01), Sonobe et al.
patent: 2008/0230793 (2008-09-01), Yoon et al.
Kim Kyung Jun
Son Hyo Kun
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Tran Long
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