Semiconductor light emitting device and its manufacturing...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S024000, C438S046000, C438S047000, C438S493000, C438S503000, C438S507000

Reexamination Certificate

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07125732

ABSTRACT:
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer9and a p-type second layer12that are deposited sequentially from nearer to remoter from the active layer. The first layer9is not thinner than 50 nm. The p-type second layer12includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

REFERENCES:
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6165812 (2000-12-01), Ishibashi et al.
patent: 2002/0084452 (2002-07-01), Ota et al.
patent: 9-219556 (1997-08-01), None
patent: 11-251684 (1998-02-01), None
patent: 2000-183462 (1998-12-01), None
patent: 2000-269548 (1999-03-01), None
patent: 2000-349398 (1999-06-01), None

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