Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-10-24
2006-10-24
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S046000, C438S047000, C438S493000, C438S503000, C438S507000
Reexamination Certificate
active
07125732
ABSTRACT:
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer9and a p-type second layer12that are deposited sequentially from nearer to remoter from the active layer. The first layer9is not thinner than 50 nm. The p-type second layer12includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.
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Asano Takeharu
Ikeda Masao
Takeya Motonobu
Louie Wai-Sing
Sonnenscheinanath & Rosenthal LLP
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