Semiconductor light emitting device and its manufacturing...

Details Semiconductor light emitting device and its manufacturing... Semiconductor light emitting device and its manufacturing...

2005-08-02

2005-08-02

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C438S045000, C257S101000, C257S102000

Reexamination Certificate

active

06924163

ABSTRACT:
Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.

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