Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-06-07
2011-06-07
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S573000, C257SE33058
Reexamination Certificate
active
07956377
ABSTRACT:
In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device1comprises semiconductor layers (2, 3) of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes (21, 31) to apply currents into each of the semiconductor layers (2, 3), an insulating layer4which holds the semiconductor layers (2, 3), and mount-surface-electrodes (5). The semiconductor layers (2) has a non-deposited area20where the other semiconductor layer (3) is not deposited. The insulating layer (4) has VIA10which electrically connect the mount-surface-electrodes5and the semiconductor-surface-electrodes (21, 31). In the manufacturing process, firstly. semiconductor layers (2, 3) and semiconductor-surface-electrodes (21, 31) are deposited on the transparent crystal substrate, and by using build-up process, insulating layer (4) and the mount-surface-electrodes (5) are formed, and secondly, VIA10are formed. and finally, the transparent crystal substrate is separated to get light-emitting device (1). Light can be extracted directly and efficiently from the semiconductor layers (2, 3). With the mount-surface-electrodes (21, 31), light-emitting device (1) can be mounted by using surface mount technology.
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Kubo Masao
Tanaka Ken'ichiro
Greenblum & Bernstein P.L.C.
Jackson, Jr. Jerome
Page Dale
Panasonic Electric Works Co., Ltd.
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