Semiconductor light emitting device and its manufacture

Details Semiconductor light emitting device and its manufacture Semiconductor light emitting device and its manufacture

2005-05-03

2005-05-03

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S096000

Reexamination Certificate

active

06888166

ABSTRACT:
A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.

REFERENCES:
patent: 20040104393 (2004-06-01), Liu et al.
patent: 20040104395 (2004-06-01), Hagimoto et al.
patent: 10-12917 (1998-01-01), None
patent: 2001-189490 (2001-07-01), None

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