Semiconductor light-emitting device and fabrication method...

Details Semiconductor light-emitting device and fabrication method... Semiconductor light-emitting device and fabrication method...

2008-07-15

2008-07-15

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S142000, C438S584000, C438S626000, C438S631000, C257SE21001, C257SE21206, C257SE21243, C257SE21303

Reexamination Certificate

active

10577722

ABSTRACT:
An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer4of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate2is provided on the grown layer4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

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