Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-04-18
2006-04-18
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S076000, C257S078000, C257S085000
Reexamination Certificate
active
07030417
ABSTRACT:
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate11; a u-GaN layer12that is formed on top of the substrate11and that comprises a plurality of concave portions121formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer13formed on the u-Ga layer12; a layered structure that is formed on the u-GaN layer13comprises an n-GaN layer15, an active layer16, and a p-GaN layer19; an n-type electrode24formed on the n-GaN layer15exposed by removing a potion of the layered structure; and a transparent p-type electrode20formed on the p-GaN layer19, wherein the p-type electrode20is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer13and the concave portions121.
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Ishibashi Akihiko
Koike Susumu
Ohnaka Kiyoshi
Yokogawa Toshiya
Le Thao P.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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