Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-09-19
2006-09-19
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
07109048
ABSTRACT:
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
REFERENCES:
patent: 5789768 (1998-08-01), Lee et al.
patent: 6943377 (2005-09-01), Gaska et al.
patent: 2003/0178626 (2003-09-01), Sugiyama et al.
patent: 2004/0079947 (2004-04-01), Lan et al.
patent: 2004/0106222 (2004-06-01), Steckl et al.
patent: 2000-349341 (2000-12-01), None
patent: 10-2003-0065884 (2003-08-01), None
patent: 10-2003-00757547 (2003-09-01), None
Choi Jae-Wan
Ha Jun-Seok
Jang Jun-Ho
Seo Jung-Hoon
Huynh Andy
LG Electronics Inc.
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