Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-08-01
2010-06-29
Trinh, Hoa B (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S099000, C257SE51018
Reexamination Certificate
active
07745833
ABSTRACT:
The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.
REFERENCES:
patent: 6541293 (2003-04-01), Koide et al.
patent: 2004/0041160 (2004-03-01), Zhao et al.
Ma Shao-Kun
Tu Chuan-Cheng
Wu Jen-Chau
Yang Cheng-Chung
Epistar Corporation
Morris Manning & Martin LLP
Tingkang Xia Tim
Trinh Hoa B
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