Semiconductor light-emitting device and fabrication method...

Details Semiconductor light-emitting device and fabrication method... Semiconductor light-emitting device and fabrication method...

2005-05-10

2009-10-20

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S088000, C257SE33057, C257SE33066

Reexamination Certificate

active

07605403

ABSTRACT:
A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.

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