Semiconductor light-emitting device and a method to produce...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

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C438S031000, C438S039000, C438S040000, C438S046000, C438S047000, C257S094000, C257S096000, C257S098000, C257S101000, C257SE21110, C257SE21111, C257SE21449, C257SE31118, C257SE33023, C257SE33029, C372S045010, C372S046010

Reexamination Certificate

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07897422

ABSTRACT:
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.

REFERENCES:
patent: 5717710 (1998-02-01), Miyazaki et al.
patent: 6664605 (2003-12-01), Akulova et al.
patent: 7087449 (2006-08-01), Kish et al.
patent: 2005/0151144 (2005-07-01), Kish et al.
patent: 7-254750 (1995-10-01), None
patent: 11-238942 (1999-08-01), None

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