Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2006-04-27
2008-08-26
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
Reexamination Certificate
active
07417258
ABSTRACT:
A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013cm−2or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.
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Bousquet Valerie
Heffernan Jonathan
Hooper Stewart Edward
Lee Calvin
Renner , Otto, Boisselle & Sklar, LLP
Sharp Kabushiki Kaisha
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